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Posted Date: 16 Oct 2009 Posted By: N K Ravishankara Member Level: Diamond
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2005 Bangalore University Diploma Instrumentation & Control Engineering SEMICONDUCTOR DEVICES (Course Code EP, EC & IC) Question paper
Second Semester Diploma (Annual) Examination, 2005
E & C Board
SEMICONDUCTOR DEVICES
(Course Code EP, EC & IC)
Time : 3 Hours Max. Marks : 100
Note : i) Question No. 1 of Section – I is compulsory
ii) Answer any six full questions choosing two questions each from Sections-II, III and IV.
Section - I
1.a) Fill in the blanks with appropriate word / words:
i) A semiconductor has ………….. temperature co-efficient of resistance.
ii) Varactor diode is always ……………. biased.
iii) A tunnel diode is a …………….. PN junction diode.
iv) The noise level in JFET is ............ as compared to ordinary transistor.
v) CMOS has a ............ power consumption.
b) Write short notes on burglar alarm and smoke detector.
Section - II
2.a) What is PN Junction? Explain the formation of depletion layer in a PN Junction?
b) What are donor and acceptor impurities? Explain with examples.
c) What is barrier potential? Give its value for germanium and silicon.
3.a) With the help of suitable diagram, explain the V-I characteristics of PN Junction diode.
b) What are an ideal diode and a real diode? Explain.
c) List the applications of a Junction diode.
4.a) Explain the output characteristics of a common base NPN transistor. Indicate the active, cut-off and saturation regions.
b) If a transistor has Ic = 4.8 mA, Ib = 100 mA and IE = 4.9 mA, calculate the values of a and b.
c) Write a short note on Heat sink.
Section - III
5.a) Explain the transfer and draw characteristics of a JFET.
b) Define the following terms for JFET
i) Drain Resistance (rd)
ii) Transconductance (gm)
iii) Amplification factor m
c)Explain the working of a transistor as a switch.
6. a) Explain the construction and operation of enhancement type MOSFET.
b) Compare JFET with MOSFET.
c) Explain the advantages of N-channel MOSFET over P-channel.
7.a)Explain the V-I characteristics of UJT and indicate how it exhibits
negative resistance property.
b) List the applications of UJT.
c) Explain the working of CMOS inverter.
Section - IV
8.a)Explain the construction and working principle of a Tunnel diode.
b)Explain Opto coupler.
c)List the application of a PIN diode
9.a)Explain the construction, working principle and characteristics of a photo transistor.
b) Explain the working of a LASER.
c) List the applications of GUNN diode.
10.a) Explain the processes involved in the fabrication of monolithic ICs.
b) Define SSI, MSI, LSI and VLSI.
c) Write a short note on IMPATT diode.
* * * * * *
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