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Posted Date: 29 Jul 2009 Posted By: Shaeed khan Member Level: Silver
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2009 Uttar Pradesh Technical University B.Tech B. tech. (sem. II)EXAMINATION, 2008-2009 ELECTRONICS ENGINEERING Question paper
Time : 3 Hours] [Total marks : 100
Note : Arrempt all questions.
SECTION-A
1 Attempt all the parts of this questions. all part of question carry equal marks. 2*10=20
This question contains 10 fill in the blanks type questions.
(a) Diffused impruties with five valance electrons are called__________.
(b) In an n-type material the electron is called the_______ and the hole is________.
(c) In reverse bais region the reverce saturation current of a silicon diode doblues
for energy________ ries in temprature.
(d) The wave length and frequency of light of a specific colour are directly related
to the___________ of the material.
(e) In the dc mode of the lavels of I(c) and I(b) are related by a quantity
called__________.
(f) The quantity Beta provides an improtant relationship between the base and collector
currents, and usually between_________.
(g) For C E configuration, typical value of Zi are in the range of__________.
(h) The input controling varible for a BJT transistor is_________.
(i) The input impendence of all commercly available FET is__________.
(j) Given beta=150 and Ie=3.2 mA for a common emitter configuration with ro=(infinite)
the value of Zi is_____________.
SECTION-B
Note : Attemp any three parts of of the followings: 10*3=30
2 (a) Explain the working of Halfwave and Fullwave bridje rectifier. What are the
advanteges of full wave rectifier?
(b) A half wave rectifier is used to supply 10 V d.c. to a resistive load of 400 ohm.
if the crystal diode has a forward resistance of 20 ohm. Determine the value of ac
voltage supplied to the circuit.
(c) Explain the potential divider bisaing circuit.
(d) Explain the CE and CC configration of BJT.
(e) What is OPAMP ? How it is ussed as an integrator and summer ?
SECTION-C
Note : Attempt all question. All question carry equal marks.
3 Attempt any one part of following :
(a) Explain the construction and characteristicts of JFET.
(b) Explain the basic construction, operation and charectristics of MOSFET.
4 Attempt any one part of following :
(a) (i) convert the (725.25)10 to its equivalent in base-2, base-8, and base-16.
(ii) Perform M-N and M+N if M=10101 and N=1111
(b) Discuss the postulate of bollean algebra. How it is different oridenry algebra?
What are universal gates?
Implement the expression of XOR gate with the help of NAND gates only.
5 Attempt any one part of following :
(a) Simplfiy the boolean function F in sum of products using don't care condition d
(using k-map)
(i) F=Y'+X'Z'
d=YZ+XY
(ii) F=B'C'D'+BCD'+ABCD'
d=B'CD'+A'BC'D
(b) How zener diode is used as shunt regulator ? Explain it.
6 Attempt any one part of following :
(a) Explain the working of digital multimeter. What are its application?
(b) Discuss in detail CRO. How is used for measurment of frequency?
7 Explain the working of possitive clipper and negative clamper circuits.
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